Tailoring hole spin splitting and polarization in nanowires

dc.creatorCsontos, D.
dc.creatorZuelicke, U.
dc.date2007-12-21
dc.date.accessioned2026-07-07T08:54:09Z
dc.date.available2026-07-07T08:54:09Z
dc.descriptionSpin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical study presented here, which has mapped the range of spin-orbit coupling strengths realized in typical semiconductors. Large controllable variations of the g-factor with associated characteristic spin polarization are shown to exist for nanowire subband edges, which therefore turn out to be a versatile laboratory for investigating the complex spin properties exhibited by quantum-confined holes.
dc.description3.1 pages, 4 figures, RevTex4, to appear in APL
dc.identifierhttps://arxiv.org/abs/0712.3624
dc.identifierhttp://arxiv.org/abs/0712.3624
dc.identifierAppl. Phys. Lett. 92, 023108 (2008)
dc.identifierdoi:10.1063/1.2834702
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/145826
dc.subjectMesoscale and Nanoscale Physics
dc.titleTailoring hole spin splitting and polarization in nanowires
dc.typetext

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