Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas

dc.creatorMinkov, G. M.
dc.creatorSherstobitov, A. A.
dc.creatorGermanenko, A. V.
dc.creatorRut, O. E.
dc.creatorLarionova, V. A.
dc.creatorBakarov, A. K.
dc.creatorZvonkov, B. N.
dc.date2005-12-05
dc.date2005-12-14
dc.date.accessioned2026-07-07T12:08:20Z
dc.date.available2026-07-07T12:08:20Z
dc.descriptionThe results of an experimental study of interaction quantum correction to the conductivity of two-dimensional electron gas in A$_3$B$_5$ semiconductor quantum well heterostructures are presented for a wide range of $Tτ$-parameter ($Tτ\simeq 0.03-0.8$), where $τ$ is the transport relaxation time. A comprehensive analysis of the magnetic field and temperature dependences of the resistivity and the conductivity tensor components allows us to separate the ballistic and diffusion parts of the correction. It is shown that the ballistic part renormalizes in the main the electron mobility, whereas the diffusion part contributes to the diagonal and does not to the off-diagonal component of the conductivity tensor. We have experimentally found the values of the Fermi-liquid parameters describing the electron-electron contribution to the transport coefficients, which are found in a good agreement with the theoretical results.
dc.description11 pages, 11 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0512087
dc.identifierhttp://arxiv.org/abs/cond-mat/0512087
dc.identifierPhys. Rev. B 74, 045314 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.045314
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/209285
dc.subjectDisordered Systems and Neural Networks
dc.subjectStrongly Correlated Electrons
dc.titleDiffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
dc.typetext

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