Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions
| dc.creator | Belashchenko, K. D. | |
| dc.creator | Velev, J. | |
| dc.creator | Tsymbal, E. Y. | |
| dc.date | 2005-05-13 | |
| dc.date.accessioned | 2026-07-07T08:23:47Z | |
| dc.date.available | 2026-07-07T08:23:47Z | |
| dc.description | The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/or small applied bias for the parallel magnetization. This explains the experimentally observed decrease in tunneling magnetoresistance (TMR) for thin MgO barriers. We predict that a monolayer of Ag epitaxially deposited at the interface between Fe and MgO suppresses tunneling through the interface band and may thus be used to enhance the TMR for thin barriers. | |
| dc.description | 4 pages, 3 eps figures (2 in color), revtex4 | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0505348 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0505348 | |
| dc.identifier | Phys. Rev. B 72, 140404(R) (2005) | |
| dc.identifier | doi:10.1103/PhysRevB.72.140404 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/136126 | |
| dc.subject | Materials Science | |
| dc.title | Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions | |
| dc.type | text |