Giant low-temperature piezoresistance effect in AlAs two-dimensional electrons

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dc.creatorShkolnikov, Y. P.
dc.creatorVakili, K.
dc.creatorDe Poortere, E. P.
dc.creatorShayegan, M.
dc.date2004-11-30
dc.date.accessioned2026-07-07T03:02:25Z
dc.date.available2026-07-07T03:02:25Z
dc.descriptionWe present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10,000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56,000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.
dc.identifierhttps://arxiv.org/abs/cond-mat/0411741
dc.identifierhttp://arxiv.org/abs/cond-mat/0411741
dc.identifierApplied Physics Letters -- October 25, 2004 -- Volume 85, Issue 17, pp. 3766-3768
dc.identifierdoi:10.1063/1.1808883
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25384
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleGiant low-temperature piezoresistance effect in AlAs two-dimensional electrons
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