Graphene Synthesis via the High Pressure - High Temperature Growth Process

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dc.creatorParvizi, F.
dc.creatorTeweldebrhan, D.
dc.creatorGhosh, S.
dc.creatorCalizo, I.
dc.creatorBalandin, A. A.
dc.creatorZhu, H.
dc.creatorAbbaschian, R.
dc.date2008-02-27
dc.date.accessioned2026-07-07T09:36:29Z
dc.date.available2026-07-07T09:36:29Z
dc.descriptionWe report on a new method for graphene synthesis and assessment of the properties of the resulting large-area graphene layers. Graphene was produced by the high pressure - high temperature growth from the natural graphitic source by utilizing the molten Fe-Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon - silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T+D and 2D bands in the Raman spectra under the 488-nm laser excitation indicate that the high pressure - high temperature technique is capable of producing the high-quality large-area single-layer graphene with a low defect density. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.
dc.identifierhttps://arxiv.org/abs/0802.4058
dc.identifierhttp://arxiv.org/abs/0802.4058
dc.identifierMicro & Nano Letters, 3, 29 (2008)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160140
dc.subjectMaterials Science
dc.titleGraphene Synthesis via the High Pressure - High Temperature Growth Process
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