The relaxation time of a chiral quantum R-L circuit

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dc.creatorGabelli, Julien
dc.creatorFève, Gwendal
dc.creatorKontos, Takis
dc.creatorBerroir, Jean-Marc
dc.creatorPlaçais, Bernard
dc.creatorGlattli, Christian
dc.creatorEtienne, Bernard
dc.creatorJin, Yong
dc.creatorBüttiker, Markus
dc.date2007-01-26
dc.date2007-05-14
dc.date.accessioned2026-07-07T08:01:03Z
dc.date.available2026-07-07T08:01:03Z
dc.descriptionWe report on the GHz complex admittance of a chiral one dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imaginary parts of the admittance. Remarkably, the phase of the admittance is transmission-independent. This shows that the relaxation time of a chiral R-L circuit is resistance independent. A current and charge conserving scattering theory is presented that accounts for this observation with a relaxation time given by the electronic transit time in the c cuit.
dc.identifierhttps://arxiv.org/abs/cond-mat/0701654
dc.identifierhttp://arxiv.org/abs/cond-mat/0701654
dc.identifierPhysical Review Letters 98 (2007) 166806
dc.identifierdoi:10.1103/PhysRevLett.98.166806
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/128833
dc.subjectMesoscale and Nanoscale Physics
dc.titleThe relaxation time of a chiral quantum R-L circuit
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