Why Some Interfaces Cannot be Sharp
| dc.creator | Nakagawa, Naoyuki | |
| dc.creator | Hwang, Harold Y. | |
| dc.creator | Muller, David A. | |
| dc.date | 2005-10-19 | |
| dc.date.accessioned | 2026-07-07T06:44:32Z | |
| dc.date.available | 2026-07-07T06:44:32Z | |
| dc.description | A central goal of modern materials physics and nanoscience is control of materials and their interfaces to atomic dimensions. For interfaces between polar and non-polar layers, this goal is thwarted by a polar catastrophe that forces an interfacial reconstruction. In traditional semiconductors this reconstruction is achieved by an atomic disordering and stoichiometry change at the interface, but in multivalent oxides a new option is available: if the electrons can move, the atoms don`t have to. Using atomic-scale electron energy loss spectroscopy we find that there is a fundamental asymmetry between ionically and electronically compensated interfaces, both in interfacial sharpness and carrier density. This suggests a general strategy to design sharp interfaces, remove interfacial screening charges, control the band offset, and hence dramatically improving the performance of oxide devices. | |
| dc.description | 12 pages of text, 6 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0510491 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0510491 | |
| dc.identifier | Nature Materials, V5, p 204-209 (2006) | |
| dc.identifier | doi:10.1038/nmat1569 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/102808 | |
| dc.subject | Materials Science | |
| dc.title | Why Some Interfaces Cannot be Sharp | |
| dc.type | text |