Gate Tunable Dissipation and "Superconductor-Insulator" Transition in Carbon Nanotube Josephson Transistors

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dc.creatorLiu, Gang
dc.creatorZhang, Yong
dc.creatorLau, Chun Ning
dc.date2008-06-16
dc.date2008-11-21
dc.date.accessioned2026-07-07T13:11:07Z
dc.date.available2026-07-07T13:11:07Z
dc.descriptionDissipation is ubiquitous in quantum systems, and its interplay with fluctuations is critical to maintaining quantum coherence. We experimentally investigate the dissipation dynamics in single-walled carbon nanotubes coupled to superconductors. The voltage-current characteristics display gate-tunable hysteresis, with sizes that perfectly correlate with the normal state resistance RN, indicating the junction undergoes a periodic modulation between underdamped and overdamped regimes. Surprisingly, when a device's Fermi-level is tuned through a local conductance minimum, we observe a gate-controlled transition from superconducting-like to insulating-like states, with a "critical" R_N value of about 8-20 kohm.
dc.descriptionFigures revised to improve clarity. Accepted for publication by Physical Review Letters
dc.identifierhttps://arxiv.org/abs/0806.2642
dc.identifierhttp://arxiv.org/abs/0806.2642
dc.identifierPhysical Review Letters 102, 016803 (2009)
dc.identifierdoi:10.1103/PhysRevLett.102.016803
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/229187
dc.subjectSuperconductivity
dc.subjectMesoscale and Nanoscale Physics
dc.titleGate Tunable Dissipation and "Superconductor-Insulator" Transition in Carbon Nanotube Josephson Transistors
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