Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region

dc.creatorTan, Y. -W.
dc.creatorZhu, J.
dc.creatorStormer, H. L.
dc.creatorPfeiffer, L. N.
dc.creatorBaldwin, K. W.
dc.creatorWest, K. W.
dc.date2005-11-28
dc.date.accessioned2026-07-07T06:49:26Z
dc.date.available2026-07-07T06:49:26Z
dc.descriptionWe determine the spin susceptibility $χ$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, $χ$ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to $4\times10^{11} cm^{-2}$. In the high density limit, $χ$ tends correctly towards $χ\to 1$ and compare well with recent theory.
dc.descriptionSubmitted to Physical Review B
dc.identifierhttps://arxiv.org/abs/cond-mat/0511668
dc.identifierhttp://arxiv.org/abs/cond-mat/0511668
dc.identifierdoi:10.1103/PhysRevB.73.045334
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/104342
dc.subjectMesoscale and Nanoscale Physics
dc.titleSpin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region
dc.typetext

Files

Collections