Dynamics of electronic transport in a semiconductor superlattice with a shunting side layer

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dc.creatorXu, Huidong
dc.creatorAmann, Andreas
dc.creatorSchöll, Eckehard
dc.creatorTeitsworth, Stephen W.
dc.date2009-01-12
dc.date.accessioned2026-07-07T12:28:52Z
dc.date.available2026-07-07T12:28:52Z
dc.descriptionWe study a model describing electronic transport in a weakly-coupled semiconductor superlattice with a shunting side layer. Key parameters include the lateral size of the superlattice, the connectivity between the quantum wells of the superlattice and the shunt layer, and the conduction properties of the shunt layer. For a superlattice with small lateral extent and high quality shunt, static electric field domains are suppressed and a spatially-uniform field configuration is predicted to be stable, a result that may be useful for proposed devices such as a superlattice-based TeraHertz (THz) oscillators. As the lateral size of the superlattice increases, the uniform field configuration loses its stability to either static or dynamic field domains, regardless of shunt properties. A lower quality shunt generally leads to regular and chaotic current oscillations and complex spatio-temporal dynamics in the field profile. Bifurcations separating static and dynamic behaviors are characterized and found to be dependent on the shunt properties.
dc.description14 pages, 15 figures, submitted
dc.identifierhttps://arxiv.org/abs/0901.1672
dc.identifierhttp://arxiv.org/abs/0901.1672
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/215684
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleDynamics of electronic transport in a semiconductor superlattice with a shunting side layer
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