Quantum measurement characteristics of double-dot single electron transistor

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dc.creatorJiao, HuJun
dc.creatorLi, Xin-Qi
dc.creatorLuo, JunYan
dc.date2006-12-29
dc.date2007-05-30
dc.date.accessioned2026-07-07T08:05:42Z
dc.date.available2026-07-07T08:05:42Z
dc.descriptionOwing to a few unique advantages, double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed, by comparing the measurement time with the measurement-induced dephasing time.
dc.description7 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0612692
dc.identifierhttp://arxiv.org/abs/cond-mat/0612692
dc.identifierPhys. Rev. B 75, 155333 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.155333
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/130364
dc.subjectMesoscale and Nanoscale Physics
dc.titleQuantum measurement characteristics of double-dot single electron transistor
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