Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition

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dc.creatorVillagonzalo, C.
dc.creatorRoemer, R. A.
dc.creatorSchreiber, M.
dc.creatorMacKinnon, A.
dc.date2000-09-27
dc.date.accessioned2026-07-07T02:38:51Z
dc.date.available2026-07-07T02:38:51Z
dc.descriptionThe scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity $σ$ obtained experimentally, we extend our linear-response-based transport calculations in the three-dimensional Anderson model of localization. Taking a dynamical scaling exponent $z$ in agreement with predictions from scaling theories, we show that the temperature-dependent $σ$, the thermoelectric power $S$, the thermal conductivity $K$ and the Lorenz number $L_0$ obey scaling.
dc.descriptionpresented at the 25th International Conference on the Physics of Semiconductors, 17-22 Sept., Osaka, Japan
dc.identifierhttps://arxiv.org/abs/cond-mat/0009425
dc.identifierhttp://arxiv.org/abs/cond-mat/0009425
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16835
dc.subjectDisordered Systems and Neural Networks
dc.titleCritical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition
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