The theory of transvers Nernst--Ettingshausen effect and thermopower of heated (hot) charge carriers in nondegenerate semiconductors in the case of high anisotropy of phonons distribution function

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dc.creatorGassym, T. M.
dc.creatorHasanov, H. A.
dc.date2001-12-10
dc.date.accessioned2026-07-07T02:43:47Z
dc.date.available2026-07-07T02:43:47Z
dc.descriptionThe transverse Nernst--Ettingshausen effect and thermopower of hot charge carriers in nondegenerate impure semiconductors placed at high electric and nonquantized magnetic fields in the nondiffusion approximation is studied. Arbitrary heating and mutual drag of electrons and long wavelength phonons interacting with electrons are considered. The spectrum of electrons is assumed to be strong nonparabolic in Kane two--band approximation. The case when the electron concentration is high and frequent interelectronic collisions lead to the equilibrium symmetric part of the electron distribution function with effective electron temperature is considered.
dc.description18 pages LaTex formatted
dc.identifierhttps://arxiv.org/abs/cond-mat/0112162
dc.identifierhttp://arxiv.org/abs/cond-mat/0112162
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18638
dc.subjectCondensed Matter
dc.titleThe theory of transvers Nernst--Ettingshausen effect and thermopower of heated (hot) charge carriers in nondegenerate semiconductors in the case of high anisotropy of phonons distribution function
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