Microwave Resonance and Carrier-Carrier Interaction in Two-Dimensional Hole Systems at High Magnetic Field
| dc.creator | Li, C. -C. | |
| dc.creator | Yoon, J. | |
| dc.creator | Engel, L. W. | |
| dc.creator | Shahar, D. | |
| dc.creator | Tsui, D. C. | |
| dc.creator | Shayegan, M. | |
| dc.date | 1998-10-06 | |
| dc.date.accessioned | 2026-07-07T03:11:40Z | |
| dc.date.available | 2026-07-07T03:11:40Z | |
| dc.description | Microwave frequency conductivity, Re($σ_{xx}$), of high quality two-dimensional hole systems (2DHS) in a large perpendicular magnetic field (B) is measured with the carrier density ($n_s$) of the 2DHS controlled by a backgate bias. The high B insulating phase of the 2DHS exhibits a microwave resonance that remains well-defined, but shifts to higher peak frequency ($f_{pk}$) as $n_s$ is reduced. Over a wide range of $n_s, f_{pk} \propto n_s^{-1/2}$ is observed for the two samples we measured. The data clearly indicate that both carrier-carrier interactions and disorder are indispensable in determining the dynamics of the insulator. The $n_s$ dependence of $f_{pk}$ is consistent with a weakly pinned Wigner crystal in which domain size increases with $n_s$, due to larger carrier-carrier interaction. | |
| dc.description | 4 pages, 3 figures, submitted to Physical Review Letters | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9810066 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9810066 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/28660 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Microwave Resonance and Carrier-Carrier Interaction in Two-Dimensional Hole Systems at High Magnetic Field | |
| dc.type | text |