Hall Effect in Granular Metals: Weak Localization Corrections

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dc.creatorKharitonov, Maxim Yu.
dc.creatorEfetov, Konstantin B.
dc.date2007-07-31
dc.date.accessioned2026-07-07T08:21:20Z
dc.date.available2026-07-07T08:21:20Z
dc.descriptionWe study the effects of localization on the Hall transport in a granular system at large tunneling conductance $g_{T}\gg 1$ corresponding to the metallic regime. We show that the first-order in 1/g_T weak localization correction to Hall resistivity of a two- or three-dimensional granular array vanishes identically, $\de ρ_{xy}^{WL}=0$. This result is in agreement with the one for ordinary disordered metals. Being due to an exact cancellation, our result holds for arbitrary relevant values of temperature T and magnetic field H, both in the ``homogeneous'' regime of very low T and H corresponding to ordinary disordered metals and in the ``structure-dependent'' regime of higher values of T or H.
dc.description8 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0707.4582
dc.identifierhttp://arxiv.org/abs/0707.4582
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135324
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleHall Effect in Granular Metals: Weak Localization Corrections
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