Absence of magic fillings of carrier-doped C$_{60}$ in a field-effect transistor
| dc.creator | Yunoki, Seiji | |
| dc.creator | Sawatzky, George A. | |
| dc.date | 2001-10-29 | |
| dc.date.accessioned | 2026-07-07T02:43:18Z | |
| dc.date.available | 2026-07-07T02:43:18Z | |
| dc.description | Motivated by recent experiments of carrier-doped C$_{60}$ in a field-effect transistor (FET), effects of spatial single particle potential variations on Mott-Hubbard (MH) insulators are studied theoretically. It is shown that the presence of strong random potentials leads to a reduced dependence of electronic properties on band fillings and to disappearance of the MH insulating behavior at integer fillings. A simple physical picture to explain this behavior is given using a notion of self-doping of the MH insulator. Our results have important implications on some of the puzzling observations of carrier-doped C$_{60}$ in the FET. It is also discussed that the FET configuration with Al{$_2$}O{$_3$} dielectric provides an ``ideal'' system with strong disorders. | |
| dc.description | 4 pages, RevTeX version 4, with 3 figures included | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0110602 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0110602 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/18450 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.subject | Disordered Systems and Neural Networks | |
| dc.title | Absence of magic fillings of carrier-doped C$_{60}$ in a field-effect transistor | |
| dc.type | text |