Investigation of Sb diffusion in amorphous silicon

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dc.creatorCsik, A.
dc.creatorLanger, G. A.
dc.creatorErdelyi, G.
dc.creatorBeke, D. L.
dc.creatorErdelyi, Z.
dc.creatorVad, K.
dc.date2009-02-12
dc.date.accessioned2026-07-07T12:40:54Z
dc.date.available2026-07-07T12:40:54Z
dc.descriptionAmorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spectrometry (SNMS). Amorphous Si/Si1-xSbx/Si tri-layer samples with 5 at% antimony concentration were prepared by DC magnetron sputtering onto Si substrate at room temperature. Annealing of the samples were performed at different temperature in vacuum (p<10-7 mbar) and 100 bar high purity (99.999%) Ar pressure. During annealing a rather slow mixing between the Sb-alloyed and the amorphous Si layers was observed. Supposing concentration independent diffusion, the evaluated diffusion coefficients are in the range of ~10-21 m2s-1 at 823 K.
dc.descriptionThis work was presented on JVC-11 conference
dc.identifierhttps://arxiv.org/abs/0902.2042
dc.identifierhttp://arxiv.org/abs/0902.2042
dc.identifierVacuum 82(2) (2008) 257-260
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/219590
dc.subjectMaterials Science
dc.titleInvestigation of Sb diffusion in amorphous silicon
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