MgB2 Energy Gap Determination by Scanning Tunneling Spectroscopy
| dc.creator | Heitmann, T. W. | |
| dc.creator | Bu, S. D. | |
| dc.creator | Kim, D. M. | |
| dc.creator | Choi, J. H. | |
| dc.creator | Giencke, J. | |
| dc.creator | Eom, C. B. | |
| dc.creator | Regan, K. A. | |
| dc.creator | Rogado, N. | |
| dc.creator | Hayward, M. A. | |
| dc.creator | He, T. | |
| dc.creator | Slusky, J. S. | |
| dc.creator | Khalifah, P. | |
| dc.creator | Haas, M. | |
| dc.creator | Cava, R. J. | |
| dc.creator | Larbalestier, D. C | |
| dc.creator | Rzchowski, M. S. | |
| dc.date | 2002-12-09 | |
| dc.date | 2003-09-29 | |
| dc.date.accessioned | 2026-07-07T02:48:37Z | |
| dc.date.available | 2026-07-07T02:48:37Z | |
| dc.description | We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap delta=2.3-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, delta=7.2 meV, consistent with a proposed two-band model. | |
| dc.description | 24 pages, 8 figures Text changes and corrected fits in figures Submitted to Superconductor Science and Technology | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0212194 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0212194 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/20476 | |
| dc.subject | Superconductivity | |
| dc.title | MgB2 Energy Gap Determination by Scanning Tunneling Spectroscopy | |
| dc.type | text |