Control of spin coherence in semiconductor double quantum dots
| dc.creator | Wang, Y. Y. | |
| dc.creator | Wu, M. W. | |
| dc.date | 2007-08-23 | |
| dc.date | 2008-02-18 | |
| dc.date.accessioned | 2026-07-07T09:26:58Z | |
| dc.date.available | 2026-07-07T09:26:58Z | |
| dc.description | We propose a scheme to manipulate the spin coherence in vertically coupled GaAs double quantum dots. Up to {\em ten} orders of magnitude variation of the spin relaxation and {\em two} orders of magnitude variation of the spin dephasing can be achieved by a small gate voltage applied vertically on the double dot. Specially, large variation of spin relaxation still exists at 0 K. In the calculation, the equation-of-motion approach is applied to obtain the electron decoherence time and all the relevant spin decoherence mechanisms, such as the spin-orbit coupling together with the electron--bulk-phonon scattering, the direct spin-phonon coupling due to the phonon-induced strain, the hyperfine interaction and the second-order process of electron-phonon scattering combined with the hyperfine interaction, are included. The condition to obtain the large variations of spin coherence is also addressed. | |
| dc.description | 6 pages, 4 figures, to be published in PRB | |
| dc.identifier | https://arxiv.org/abs/0708.3125 | |
| dc.identifier | http://arxiv.org/abs/0708.3125 | |
| dc.identifier | Phys. Rev. B 77, 125323 (2008). | |
| dc.identifier | doi:10.1103/PhysRevB.77.125323 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/156941 | |
| dc.subject | Materials Science | |
| dc.title | Control of spin coherence in semiconductor double quantum dots | |
| dc.type | text |