Origin and control of high-temperature ferromagnetism in semiconductors

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dc.creatorKuroda, Shinji
dc.creatorNishizawa, Nozomi
dc.creatorTakita, Koki
dc.creatorMitome, Masanori
dc.creatorBando, Yoshio
dc.creatorOsuch, Krzysztof
dc.creatorDietl, Tomasz
dc.date2008-04-02
dc.date.accessioned2026-07-07T09:29:51Z
dc.date.available2026-07-07T09:29:51Z
dc.descriptionThe extensive experimental and computational search for multifunctional materials has resulted in the development of semiconductor and oxide systems, such as (Ga,Mn)N, (Zn,Cr)Te, and HfO2, which exhibit surprisingly stable ferromagnetic signatures despite having a small or nominally zero concentration of magnetic elements. Here, we show that the ferromagnetism of (Zn,Cr)Te, and the associated magnetooptical and magnetotransport functionalities, are dominated by the formation of Cr-rich (Zn,Cr)Te metallic nanocrystals embedded in the Cr-poor (Zn,Cr)Te matrix. Importantly, the formation of these nanocrystals can be controlled by manipulating the charge state of Cr ions during the epitaxy. The findings provide insight into the origin of ferromagnetism in a broad range of semiconductors and oxides, and indicate possible functionalities of these composite systems. Furthermore, they demonstrate a bottom-up method for self-organized nanostructure fabrication that is applicable to any system in which the charge state of a constituent depends on the Fermi-level position in the host semiconductor.
dc.description22 pages, 8 figures (incl. Supplementary Information)
dc.identifierhttps://arxiv.org/abs/0804.0322
dc.identifierhttp://arxiv.org/abs/0804.0322
dc.identifierNature Materials vol.6, 440-446 (2007)
dc.identifierdoi:10.1038/nmat1910
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157942
dc.subjectMaterials Science
dc.titleOrigin and control of high-temperature ferromagnetism in semiconductors
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