Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

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dc.creatorTu, Ryan
dc.creatorZhang, Li
dc.creatorNishi, Yoshio
dc.creatorDai, Hongjie
dc.date2007-05-17
dc.date.accessioned2026-07-07T08:02:04Z
dc.date.available2026-07-07T08:02:04Z
dc.descriptionCapacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility due to device geometries, surface and interface states and gate dielectric constants and thicknesses. Direct experimental evidence showed that surround-gated nanowire transistors exhibit higher capacitance and better electrostatic gate control than top-gated devices, and are the most promising structure for future high performance nanoelectronics.
dc.identifierhttps://arxiv.org/abs/0705.2579
dc.identifierhttp://arxiv.org/abs/0705.2579
dc.identifierdoi:10.1021/nl070378w
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/129114
dc.subjectMaterials Science
dc.titleMeasuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment
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