Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

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dc.creatorWang, J.
dc.creatorCotoros, I.
dc.creatorLiu, X.
dc.creatorChovan, J.
dc.creatorFurdyna, J. K.
dc.creatorPerakis, I. E.
dc.creatorChemla, D. S.
dc.date2008-04-22
dc.date.accessioned2026-07-07T09:33:59Z
dc.date.available2026-07-07T09:33:59Z
dc.descriptionWe report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.
dc.identifierhttps://arxiv.org/abs/0804.3456
dc.identifierhttp://arxiv.org/abs/0804.3456
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/159327
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleMemory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs
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