Quantitative detection of electrically injected spin accumulation in GaAs using the magneto-optical Kerr effect

Simple item page
dc.creatorKimel, A. V.
dc.creatorKirilyuk, A.
dc.creatorGrabs, P.
dc.creatorLehmann, F.
dc.creatorTsvetkov, A. A.
dc.creatorSchmidt, G.
dc.creatorMolenkamp, L. W.
dc.creatorRasing, Th.
dc.date2005-07-25
dc.date.accessioned2026-07-07T03:06:06Z
dc.date.available2026-07-07T03:06:06Z
dc.descriptionUsing an ultra sensitive magneto-optical Kerr rotation setup we have observed electrical spin injection from (Zn,Mn)Se into bulk GaAs and quantified the spin injection efficiency. The current induced contribution was carefully separated from possible artifacts and studied as a function of voltage and external magnetic field. Our measurements allow us to estimate the concentration of the electrically injected spins into GaAs to be approximately 0.4$\times10^{15}$cm$^{-3}$ at a reverse bias of 0.7 V.
dc.descriptionSubmitted to PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/0507575
dc.identifierhttp://arxiv.org/abs/cond-mat/0507575
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26689
dc.subjectMesoscale and Nanoscale Physics
dc.titleQuantitative detection of electrically injected spin accumulation in GaAs using the magneto-optical Kerr effect
dc.typetext

Files

Collections

arXiv