Dielectric Properties of Noncrystalline HfSiON

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dc.creatorKoike, Masahiro
dc.creatorIno, Tsunehiro
dc.creatorKamimuta, Yuuichi
dc.creatorKoyama, Masato
dc.creatorKamata, Yoshiki
dc.creatorSuzuki, Masamichi
dc.creatorMitani, Yuichiro
dc.creatorNishiyama, Akira
dc.date2006-01-23
dc.date.accessioned2026-07-07T06:57:44Z
dc.date.available2026-07-07T06:57:44Z
dc.descriptionThe dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a variety of atomic compositions were investigated. The films were deposited by reactive sputtering of Hf and Si in an O, N, and Ar mixture ambient. The bonding states, band-gap energies, atomic compositions, and crystallinities were confirmed by X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), Rutherford backscattering spectrometry (RBS), and X-ray diffractometry (XRD), respectively. The optical (high-frequency) dielectric constants were optically determined by the square of the reflective indexes measured by ellipsometry. The static dielectric constants were electrically estimated by the capacitance of Au/HfSiON/Si(100) structures. It was observed that low N incorporation in the films led to the formation of only Si-N bonds without Hf-N bonds. An abrupt decrease in band-gap energies was observed at atomic compositions corresponding to the boundary where Hf-N bonds start to form. By combining the data for the atomic concentrations and bonding states, we found that HfSiON can be regarded as a pseudo-quaternary alloy consisting of four insulating components: SiO$_2$, HfO$_2$, Si$_3$N$_4$, and Hf$_3$N$_4$. The optical and static dielectric constants for the films showed a nonlinear dependence on the N concentration, whose behavior can be understood in terms of abrupt Hf-N bond formation.
dc.description17 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0601503
dc.identifierhttp://arxiv.org/abs/cond-mat/0601503
dc.identifierPhys. Rev. B 73, 125123 (2006)
dc.identifierdoi:10.1103/PhysRevB.73.125123
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/107078
dc.subjectMaterials Science
dc.titleDielectric Properties of Noncrystalline HfSiON
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