A semiconductor exciton memory cell based on a single quantum nanostructure

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dc.creatorKrenner, H. J.
dc.creatorPryor, C. E.
dc.creatorHe, J.
dc.creatorPetroff, P. M.
dc.date2008-05-13
dc.date.accessioned2026-07-07T09:44:38Z
dc.date.available2026-07-07T09:44:38Z
dc.descriptionWe demonstrate storage of excitons in a single nanostructure, a self-assembled Quantum Post. After generation electron and holes forming the exciton are separated by an electric field towards opposite ends of the Quantum Post inhibiting their radiative recombination. After a defined time such spatially indirect excitons are reconverted to optically active direct excitons by switching the electric field. The emitted light of the stored exciton is detected in the limit of a single nanostructure and storage times exceeding 30 msec are demonstrated. We identify a slow tunneling of the electron out of the Quantum Post as the dominant loss mechanism by comparing the field dependent temporal decay of the storage signal to models for this process and radiative losses.
dc.description23 pages
dc.identifierhttps://arxiv.org/abs/0805.1819
dc.identifierhttp://arxiv.org/abs/0805.1819
dc.identifierNano Letters 8, 1750-1755 (2008)
dc.identifierdoi:10.1021/nl800911n
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/162948
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleA semiconductor exciton memory cell based on a single quantum nanostructure
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