Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation

Simple item page
dc.creatorMani, R G
dc.creatorSmet, J H
dc.creatorvon Klitzing, K
dc.creatorNarayanamurti, V
dc.creatorJohnson, W B
dc.creatorUmansky, V
dc.date2003-05-21
dc.date2004-04-29
dc.date.accessioned2026-07-07T02:51:28Z
dc.date.available2026-07-07T02:51:28Z
dc.descriptionOscillations of the resistance observed under electromagnetic wave excitation in the high mobility GaAs/AlGaAs 2DES are examined as a function of the radiation frequency and the power, utilizing an empirical lineshape based on exponentially damped sinusoids. The fit-analysis indicates the resistance oscillation frequency, F, increases with the radiation frequency, n, at the rate dF/dn = 2.37 mTesla/GHz; the damping parameter, a, is approximately independent of n at constant power; and the amplitude, A, of the oscillations grows slowly with the incident power, at a constant temperature and frequency. The lineshape appears to provide a good description of the data.
dc.descriptionpresented at the 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland, 29 July - 2 August 2002
dc.identifierhttps://arxiv.org/abs/cond-mat/0305507
dc.identifierhttp://arxiv.org/abs/cond-mat/0305507
dc.identifierProc. of the 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland, 29 July - 2 August 2002, IOP Conference Series 171, eds. A. C. Long and J. H. Davies (IOP, Bristol, 2003) H112
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21466
dc.subjectMesoscale and Nanoscale Physics
dc.titleMagnetoresistive response of a high mobility 2DES under electromagnetic wave excitation
dc.typetext

Files

Collections

arXiv