Inelastic electron tunneling via molecular vibrations in single-molecule transistors

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dc.creatorYu, L. H.
dc.creatorKeane, Z. K.
dc.creatorCiszek, J. W.
dc.creatorCheng, L.
dc.creatorStewart, M. P.
dc.creatorTour, J. M.
dc.creatorNatelson, D.
dc.date2004-08-03
dc.date.accessioned2026-07-07T02:59:33Z
dc.date.available2026-07-07T02:59:33Z
dc.descriptionIn single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in-situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification of the vibrational states. When the molecule contains an unpaired electron, we also observe vibrational satellite features around the Kondo resonance.
dc.description5 pages, 4 figures. Supplementary information available upon request
dc.identifierhttps://arxiv.org/abs/cond-mat/0408052
dc.identifierhttp://arxiv.org/abs/cond-mat/0408052
dc.identifierPhys. Rev. Lett. 93, 266802 (2004)
dc.identifierdoi:10.1103/PhysRevLett.93.266802
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24556
dc.subjectMesoscale and Nanoscale Physics
dc.titleInelastic electron tunneling via molecular vibrations in single-molecule transistors
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