Photon Assisted Electric Field Domains in Semiconductor Doped Superlattices

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dc.creatorAguado, R.
dc.creatorPlatero, G.
dc.date1997-12-03
dc.date.accessioned2026-07-07T03:09:33Z
dc.date.available2026-07-07T03:09:33Z
dc.descriptionWe study photon-assisted tunneling (PAT) through weakly-coupled doped semiconductor superlattices (SL's) in the high voltage regime. A self-consistent model which treats the Coulomb interaction in a mean field approximation is considered. We discuss the formation of electric field domains in the presence of THz radiation and the appearance of new multistability regions caused by the combined effect of the strong non linearity coming from the Coulomb interaction and the new PAT channels.We show how the electric field domains can be supported by the virtual photonic sidebands due to multiple photon emission and absorption.
dc.description7 pages, 3 postscript figures. To be published in Physica B (proceedings of the EP2DS-12, Tokyo)
dc.identifierhttps://arxiv.org/abs/cond-mat/9712032
dc.identifierhttp://arxiv.org/abs/cond-mat/9712032
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27935
dc.subjectCondensed Matter
dc.titlePhoton Assisted Electric Field Domains in Semiconductor Doped Superlattices
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