Quantum Lithography Based on Multiple Light Exposures for Arbitrary Sub-Diffraction-Limit Pattern Generation

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dc.creatorPark, Hee Su
dc.creatorLee, Sun Kyung
dc.date2008-06-13
dc.date2008-08-19
dc.date.accessioned2026-07-07T09:56:59Z
dc.date.available2026-07-07T09:56:59Z
dc.descriptionWe propose a super-resolution quantum lithography scheme based on coherent population trapping in lambda-type atoms coupled to temporally-cascaded standing-wave driving fields. By realizing effective multiplication of optical intensity profiles on an atomic state density distribution, the scheme enables an arbitrarily high degree of resolution enhancement without modifying the atomic level structure of the photographic medium or the light source configuration. It is also shown that the visibility of the super-resolution patterns is preserved under a significant atomic state decoherence rate.
dc.description13 pages, 4 figures; Added a figure and references, revised the Abstract and the text to better emphasize the major points
dc.identifierhttps://arxiv.org/abs/0806.2175
dc.identifierhttp://arxiv.org/abs/0806.2175
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/167181
dc.subjectQuantum Physics
dc.titleQuantum Lithography Based on Multiple Light Exposures for Arbitrary Sub-Diffraction-Limit Pattern Generation
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