Density of bulk trap states in organic semiconductor crystals: discrete levels induced by oxygen in rubrene

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dc.creatorKrellner, C.
dc.creatorHaas, S.
dc.creatorGoldmann, C.
dc.creatorPernstich, K. P.
dc.creatorGundlach, D. J.
dc.creatorBatlogg, B.
dc.date2007-04-24
dc.date2007-06-19
dc.date.accessioned2026-07-07T08:10:34Z
dc.date.available2026-07-07T08:10:34Z
dc.descriptionThe density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscopy (TD-SCLC). This spectroscopy has been applied to study bulk rubrene single crystals, which are shown by this technique to be of high chemical and structural quality. A density of deep trap states as low as ~ 10^{15} cm^{-3} is measured in the purest crystals, and the exponentially varying shallow trap density near the band edge could be identified (1 decade in the density of states per ~25 meV). Furthermore, we have induced and spectroscopically identified an oxygen related sharp hole bulk trap state at 0.27 eV above the valence band.
dc.descriptionpublished in Phys. Rev. B, high quality figures: http://www.cpfs.mpg.de/~krellner/
dc.identifierhttps://arxiv.org/abs/0704.3218
dc.identifierhttp://arxiv.org/abs/0704.3218
dc.identifierPhys. Rev. B 75, 245115 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.245115
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/131861
dc.subjectMaterials Science
dc.titleDensity of bulk trap states in organic semiconductor crystals: discrete levels induced by oxygen in rubrene
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