Realizing a stable magnetic double-well potential on an atom chip

Simple item page
dc.creatorEsteve, Jerome
dc.creatorSchumm, Thorsten
dc.creatorTrebbia, Jean-Baptiste
dc.creatorBouchoule, Isabelle
dc.creatorAspect, Alain
dc.creatorWestbrook, Christopher
dc.date2005-03-14
dc.date.accessioned2026-07-07T06:20:54Z
dc.date.available2026-07-07T06:20:54Z
dc.descriptionWe discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.
dc.identifierhttps://arxiv.org/abs/physics/0503112
dc.identifierhttp://arxiv.org/abs/physics/0503112
dc.identifierEuropean Physical Journal D 35 (2005) 141-146
dc.identifierdoi:10.1140/epjd/e2005-00190-9
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95443
dc.subjectAtomic Physics
dc.subjectOther Condensed Matter
dc.titleRealizing a stable magnetic double-well potential on an atom chip
dc.typetext

Files

Collections

arXiv