Three-dimensional MgB$_{2}$-type superconductivity in hole-doped diamond

dc.creatorBoeri, Lilia
dc.creatorKortus, Jens
dc.creatorAndersen, O. K.
dc.date2004-04-19
dc.date2004-11-30
dc.date.accessioned2026-07-07T02:57:43Z
dc.date.available2026-07-07T02:57:43Z
dc.descriptionWe substantiate by calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB$_2$, albeit in 3 dimensions. Holes at the top of the zone-centered, degenerate $σ$-bonding valence band couple strongly to the optical bond-stretching modes. The increase from 2 to 3 dimensions reduces the mode-softening crucial for $T_{c}$ reaching 40 K in MgB$_{2}.$ Even if diamond had the same \emph{bare} coupling constant as MgB$_{2},$ which could be achieved with 10% doping, $T_{c}$ would only be 25 K. Superconductivity above 1 K in Si (Ge) requires hole-doping beyond 5% (10%).
dc.descriptionrevised version, accepted by PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/0404447
dc.identifierhttp://arxiv.org/abs/cond-mat/0404447
dc.identifierPhys. Rev. Lett. 93, 237002 (2004)
dc.identifierdoi:10.1103/PhysRevLett.93.237002
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23777
dc.subjectSuperconductivity
dc.subjectMaterials Science
dc.titleThree-dimensional MgB$_{2}$-type superconductivity in hole-doped diamond
dc.typetext

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