Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

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dc.creatorShubina, T. V.
dc.creatorIvanov, S. V.
dc.creatorJmerik, V. N.
dc.creatorSolnyshkov, D. D.
dc.creatorCherkashin, N. A.
dc.creatorKop'ev, P. S.
dc.creatorVasson, A.
dc.creatorLeymarie, J.
dc.creatorKarlsson, K. F.
dc.creatorHoltz, P. O.
dc.creatorMonemar, B.
dc.date2003-11-09
dc.date.accessioned2026-07-07T02:54:40Z
dc.date.available2026-07-07T02:54:40Z
dc.descriptionWe demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.
dc.description4 pages, 6 figures, submitted to PRB
dc.identifierhttps://arxiv.org/abs/cond-mat/0311191
dc.identifierhttp://arxiv.org/abs/cond-mat/0311191
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22645
dc.subjectMaterials Science
dc.titleSimilarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
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