The Quantized Hall Insulator

dc.creatorShimshoni, Efrat
dc.creatorAuerbach, Assa
dc.date1996-07-04
dc.date1996-07-07
dc.date.accessioned2026-07-07T09:02:29Z
dc.date.available2026-07-07T09:02:29Z
dc.descriptionWe model the insulator neighboring the 1/k quantum Hall phase by a random network of puddles of filling fraction 1/k. The puddles are coupled by weak tunnel barriers. Using Kirchoff's laws we prove that the macroscopic Hall resistivity is quantized at $k h/ e^2$ and independent of magnetic field and current bias -- in agreement with recent experimental observations. In addition, for k>1 this theory predicts non linear longitudinal response $V\sim I^α$ at zero temperature, and $V/I\sim T^{1-{1\over α}}$ at low bias. $α$ is determined using Renn and Arovas' theory for the single junction response, and is related to the Luttinger liquid spectra of the edge states straddling the typical tunnel barrier. The dependence of $V(I)$ on the magnetic field is related to the typical puddle size. Deviations of $V(I)$ from a pure power law are estimated using a series/parallel approximation for the two dimensional random nonlinear resistor network. We check the validity of this approximation by numerically solving for a finite square lattice network.
dc.description7 pages, Revtex, 3 Encapsulated Postscript figures, uses eps.sty
dc.identifierhttps://arxiv.org/abs/cond-mat/9607031
dc.identifierhttp://arxiv.org/abs/cond-mat/9607031
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/148647
dc.subjectCondensed Matter
dc.titleThe Quantized Hall Insulator
dc.typetext

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