Hole-driven MIT theory, Mott transition in VO_2, MoBRiK

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dc.creatorKim, Hyun-Tak
dc.creatorKim, Bong-Jun
dc.creatorLee, Yong Wook
dc.creatorChae, Byung-Gyu
dc.creatorYun, Sun Jin
dc.creatorKang, Kwang-Yong
dc.date2006-07-22
dc.date.accessioned2026-07-07T09:36:27Z
dc.date.available2026-07-07T09:36:27Z
dc.descriptionFor inhomogeneous high-T_c superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole doping is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO_2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the Mott MIT is newly observed by applying electric field and temperature. The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK.
dc.description2 pages, 1 figures, This was presented in the 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors (M2S-HTSC-VIII) held in Dresden Germany from July 9 to July 14, 2006
dc.identifierhttps://arxiv.org/abs/cond-mat/0607577
dc.identifierhttp://arxiv.org/abs/cond-mat/0607577
dc.identifierPhysica C 460-462 (2007) 1076~1078
dc.identifierdoi:10.1016/j.physc.2007.03.356
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160126
dc.subjectStrongly Correlated Electrons
dc.subjectSuperconductivity
dc.titleHole-driven MIT theory, Mott transition in VO_2, MoBRiK
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