A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-doping

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dc.creatorBove, A.
dc.creatorAltomare, F.
dc.creatorKundtz, N. B.
dc.creatorChang, Albert M.
dc.creatorCho, Y. J.
dc.creatorLiu, X.
dc.creatorFurdyna, J.
dc.date2008-02-26
dc.date2008-07-18
dc.date.accessioned2026-07-07T09:50:49Z
dc.date.available2026-07-07T09:50:49Z
dc.descriptionWe report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n \sim 1.08 \times 10^{12} cm^{-2}$ and a mobility $μ\sim 600 cm^{2} / (Vs)$ at T $\sim$ 4.2K. As far as we know this is the highest mobility value reported in the literature for GaMnAs systems. A novel technique was developed to make Ohmic contact to the buried 2DEG without destroying the magnetic properties of our crystal.
dc.description5 pages with 6 figures, to be submitted to Journal of Applied Physics, worked on figures
dc.identifierhttps://arxiv.org/abs/0802.3863
dc.identifierhttp://arxiv.org/abs/0802.3863
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/165073
dc.subjectMesoscale and Nanoscale Physics
dc.titleA novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-doping
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