Simulation of quantum dead-layers in ferroelectric tunnel junctions

Simple item page
dc.creatorIndlekofer, K. M.
dc.creatorKohlstedt, H.
dc.date2005-03-03
dc.date.accessioned2026-07-07T06:22:27Z
dc.date.available2026-07-07T06:22:27Z
dc.descriptionIn this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the Thomas-Fermi screening model. As a consequence, we predict a bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.
dc.identifierhttps://arxiv.org/abs/cond-mat/0503070
dc.identifierhttp://arxiv.org/abs/cond-mat/0503070
dc.identifierEurophys. Lett. 72, 282 (2005)
dc.identifierdoi:10.1209/epl/i2005-10219-7
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95917
dc.subjectOther Condensed Matter
dc.titleSimulation of quantum dead-layers in ferroelectric tunnel junctions
dc.typetext

Files

Collections

arXiv