Distribution of the resistance of nanowires with strong impurities

dc.creatorDeroulers, Christophe
dc.date2007-05-22
dc.date.accessioned2026-07-07T08:02:48Z
dc.date.available2026-07-07T08:02:48Z
dc.descriptionMotivated by recent experiments on nanowires and carbon nanotubes, we study theoretically the effect of strong, point-like impurities on the linear electrical resistance R of finite length quantum wires. Charge transport is limited by Coulomb blockade and cotunneling. ln R is slowly self-averaging and non Gaussian. Its distribution is Gumbel with finite-size corrections which we compute. At low temperature, the distribution is similar to the variable range hopping (VRH) behaviour found long ago in doped semiconductors. We show that a result by Raikh and Ruzin does not apply. The finite-size corrections decay with the length L like 1/ln L. At higher temperatures, this regime is replaced by new laws and the shape of the finite-size corrections changes strongly: if the electrons interact weakly, the corrections vanish already for wires with a few tens impurities.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0705.3090
dc.identifierhttp://arxiv.org/abs/0705.3090
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/129345
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleDistribution of the resistance of nanowires with strong impurities
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