Temperature Control of Electromigration to form Gold Nanogap Junctions

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dc.creatorEsen, G.
dc.creatorFuhrer, M. S.
dc.date2005-11-15
dc.date.accessioned2026-07-07T08:47:18Z
dc.date.available2026-07-07T08:47:18Z
dc.descriptionControlled electromigration of gold nanowires of different cross-sectional areas to form nanogap junctions is studied using a feedback method. A linear correlation between the cross sectional area of the gold nanowires and the power dissipated in the junction during electromigration is observed, indicating that the feedback mechanism operates primarily by controlling the temperature of the junction during electromigration. We also show that the role of the external feedback circuit is to prevent thermal runaway; minimization of series resistance allows controlled electromigration to a significant range of junction resistances with a simple voltage ramp.
dc.description14 pages,5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0511382
dc.identifierhttp://arxiv.org/abs/cond-mat/0511382
dc.identifierApplied Physics Letters 87 263101 (2005)
dc.identifierdoi:10.1063/1.2149174
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143549
dc.subjectMesoscale and Nanoscale Physics
dc.titleTemperature Control of Electromigration to form Gold Nanogap Junctions
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