Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure

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dc.creatorPeralta-Ramos, J.
dc.creatorLlois, A. M.
dc.date2008-10-02
dc.date.accessioned2026-07-07T10:07:24Z
dc.date.available2026-07-07T10:07:24Z
dc.descriptionIn this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (001) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors {\it spd} tight-binding Hamiltonian parametrized to {\it ab initio} calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions.
dc.description2006
dc.identifierhttps://arxiv.org/abs/0810.0531
dc.identifierhttp://arxiv.org/abs/0810.0531
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170622
dc.subjectMesoscale and Nanoscale Physics
dc.titleTunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure
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