Theory of thermoelectric effects when the temperature approximation is incorrect

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dc.creatorGurevich, Yu. G.
dc.creatorLogvinov, G. N.
dc.creatorTitov, O. Yu.
dc.date1997-06-17
dc.date.accessioned2026-07-07T03:09:06Z
dc.date.available2026-07-07T03:09:06Z
dc.descriptionThe flow of a thermoelectric current through a semiconductor of submicron dimensions is analyzed. The rate of surface relaxation of the energy is assumed to be much higher than the rate of electron-electron collisions. Under these conditions, it is incorrect to describe the electron gas by means of a Maxwellian distribution and thus to describe the thermoelectric effects in terms of an electron temperature and a chemical potential. A theory is derived for these effects. This theory does not include the latter parameters and is based on a non-Maxwellian distribution which is spatially nonuniform in terms of energy.
dc.description6 pages, RevTeX, AMSMath, authors can be contacted at http://www.fis.cinvestav.mx/~titov/
dc.identifierhttps://arxiv.org/abs/cond-mat/9706180
dc.identifierhttp://arxiv.org/abs/cond-mat/9706180
dc.identifierSemiconductors 28 (1), January 1994, p. 68--71
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27754
dc.subjectCondensed Matter
dc.titleTheory of thermoelectric effects when the temperature approximation is incorrect
dc.typetext

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