Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles

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dc.creatorWunnicke, Olaf
dc.creatorMavropoulos, Phivos
dc.creatorDederichs, Peter H.
dc.date2002-07-19
dc.date.accessioned2026-07-07T02:46:22Z
dc.date.available2026-07-07T02:46:22Z
dc.descriptionWe calculate the current spin polarisation and the interface resistance of Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles, including also the possibility of a Schottky barrier. From our results of interface resistance we estimate the barrier thickness needed for efficient spin injection if the process is non-ballistic.
dc.description2 figures; submitted to Journal of Superconductivity: Incorporating Novel Magnetism
dc.identifierhttps://arxiv.org/abs/cond-mat/0207492
dc.identifierhttp://arxiv.org/abs/cond-mat/0207492
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19644
dc.subjectMaterials Science
dc.titleSpin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles
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