A spin Esaki diode

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dc.creatorKohda, Makoto
dc.creatorOhno, Yuzo
dc.creatorTakamura, Koji
dc.creatorMatsukura, Fumihiro
dc.creatorOhno, Hideo
dc.date2001-10-11
dc.date2001-10-15
dc.date.accessioned2026-07-07T02:43:08Z
dc.date.available2026-07-07T02:43:08Z
dc.descriptionWe demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga,Mn)As to the conduction band of n+-GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with +-6.5% remanence is observed in the magnetic-field dependence of the EL polarization at 6 K, below the Curie temperature of (Ga,Mn)As.
dc.description11pages, 4figures. Submitted Japanese Journal of Applied Physics Pt2 Express Letter
dc.identifierhttps://arxiv.org/abs/cond-mat/0110241
dc.identifierhttp://arxiv.org/abs/cond-mat/0110241
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18374
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleA spin Esaki diode
dc.typetext

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