Self-localization of holes in a lightly doped Mott insulator

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dc.creatorKou, Su-Peng
dc.creatorWeng, Z. Y.
dc.date2004-02-12
dc.date2004-03-06
dc.date.accessioned2026-07-07T06:25:16Z
dc.date.available2026-07-07T06:25:16Z
dc.descriptionWe show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T$_c$ cuprates. Disorder and impurities only play a minor and assistant role here.
dc.description13 pages, 4 figures; additional experimental data are included in Fig. 3 and some comments are added in the text
dc.identifierhttps://arxiv.org/abs/cond-mat/0402327
dc.identifierhttp://arxiv.org/abs/cond-mat/0402327
dc.identifierEur. Phys. J. B 47, 37-46 (2005)
dc.identifierdoi:10.1140/epjb/e2005-00300-7
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/96789
dc.subjectStrongly Correlated Electrons
dc.subjectSuperconductivity
dc.titleSelf-localization of holes in a lightly doped Mott insulator
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