Theory of charge fluctuations and domain relocation times in semiconductor superlattices
| dc.creator | Bonilla, L. L. | |
| dc.date | 2004-12-07 | |
| dc.date.accessioned | 2026-07-07T03:02:32Z | |
| dc.date.available | 2026-07-07T03:02:32Z | |
| dc.description | Shot noise affects differently the nonlinear electron transport in semiconductor superlattices depending on the strength of the coupling among the superlattice quantum wells. Strongly coupled superlattices can be described by a miniband Boltzmann-Langevin equation from which a stochastic drift-diffusion equation is derived by means of a consistent Chapman-Enskog method. Similarly, shot noise in weakly coupled, highly doped semiconductor superlattices is described by a stochastic discrete drift-diffusion model. The current-voltage characteristics of the corresponding deterministic model consist of a number of stable branches corresponding to electric field profiles displaying two domains separated by a domain wall. If the initial state corresponds to a voltage on the middle of a stable branch and is suddenly switched to a final voltage corresponding to the next branch, the domains relocate after a certain delay time, called relocation time. The possible scalings of this mean relocation time are discussed using bifurcation theory and the classical results for escape of a Brownian particle from a potential well. | |
| dc.description | 14 pages, 2 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0412164 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0412164 | |
| dc.identifier | Physica D 199, 105-114 (2004) | |
| dc.identifier | doi:10.1016/j.physd.2004.08.008 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/25428 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Theory of charge fluctuations and domain relocation times in semiconductor superlattices | |
| dc.type | text |