Microwave photovoltage and photoresistance effects in ferromagnetic microstrips

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dc.creatorMecking, N.
dc.creatorGui, Y. S.
dc.creatorHu, C. -M.
dc.date2007-10-10
dc.date2008-04-10
dc.date.accessioned2026-07-07T09:31:11Z
dc.date.available2026-07-07T09:31:11Z
dc.descriptionWe investigate the dc electric response induced by ferromagnetic resonance in ferromagnetic Permalloy (Ni80Fe20) microstrips. The resulting magnetization precession alters the angle of the magnetization with respect to both dc and rf current. Consequently the time averaged anisotropic magnetoresistance (AMR) changes (photoresistance). At the same time the time-dependent AMR oscillation rectifies a part of the rf current and induces a dc voltage (photovoltage). A phenomenological approach to magnetoresistance is used to describe the distinct characteristics of the photoresistance and photovoltage with a consistent formalism, which is found in excellent agreement with experiments performed on in-plane magnetized ferromagnetic microstrips. Application of the microwave photovoltage effect for rf magnetic field sensing is discussed.
dc.description16 pages, 15 figures
dc.identifierhttps://arxiv.org/abs/0710.1974
dc.identifierhttp://arxiv.org/abs/0710.1974
dc.identifierPhysical Review B 76, 224430 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.224430
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158370
dc.subjectStrongly Correlated Electrons
dc.titleMicrowave photovoltage and photoresistance effects in ferromagnetic microstrips
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