Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors

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dc.creatorPolkovnikov, Anatoli
dc.creatorZegrya, Georgy
dc.date2001-01-21
dc.date.accessioned2026-07-07T02:40:08Z
dc.date.available2026-07-07T02:40:08Z
dc.descriptionInfluence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers doesn't exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used.
dc.identifierhttps://arxiv.org/abs/cond-mat/0101328
dc.identifierhttp://arxiv.org/abs/cond-mat/0101328
dc.identifierPhys. Rev. B 64, 073205 (2001)
dc.identifierdoi:10.1103/PhysRevB.64.073205
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17278
dc.subjectMaterials Science
dc.titleElectron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors
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