Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures

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dc.creatorArapov, Yu. G.
dc.creatorHarus, G. I.
dc.creatorNeverov, V. N.
dc.creatorLonchakov, A. T.
dc.creatorShelushinina, N. G.
dc.creatorYakunin, M. V.
dc.date2002-12-27
dc.date.accessioned2026-07-07T02:48:56Z
dc.date.available2026-07-07T02:48:56Z
dc.descriptionWe report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samples the negative MR is observed in a whole range of magnetic fields up to ~1T at T <=12K, but for the other sample the MR transforms from the negative to positive at B >= 0.2T and T >=1.3K. We attribute such a behavior to the interplay of two types of holes due to partial filling of the second subband. Extrapolation of the observed high-field parabolic MR to B = 0 allows to separate WL and EEI contributions to the total quantum corrections to conductivity at B = 0 resulting for both of our structures in that EEI part is ~2/3 and the WL part is ~1/3.
dc.identifierhttps://arxiv.org/abs/cond-mat/0212612
dc.identifierhttp://arxiv.org/abs/cond-mat/0212612
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20601
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleLocalization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures
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