Investigations of thermometric characteristics of p+-n - type GaP diodes

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dc.creatorKrasnov, V. A.
dc.creatorShwarts, Yu. M.
dc.creatorShwarts, M. M.
dc.creatorKopko, D. P.
dc.creatorFonkich, A. M.
dc.creatorYerochin, S. Yu.
dc.creatorShutov, S. V.
dc.creatorSypko, N. I
dc.date2008-06-25
dc.date.accessioned2026-07-07T09:46:40Z
dc.date.available2026-07-07T09:46:40Z
dc.descriptionThe technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics of the test diodes were measured in the temperature range of 80 / 520K and their basic technical characteristics were determined. An availability of application of the structures developed as sensing elements of high-temperature heat sensors was shown.
dc.description9 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0806.4138
dc.identifierhttp://arxiv.org/abs/0806.4138
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163608
dc.subjectMaterials Science
dc.titleInvestigations of thermometric characteristics of p+-n - type GaP diodes
dc.typetext

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