Monopolar Optical Orientation of Electronic Spins in Semiconductors

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dc.creatorTarasenko, S. A.
dc.creatorIvchenko, E. L.
dc.creatorBel'kov, V. V.
dc.creatorGanichev, S. D.
dc.creatorSchowalter, D.
dc.creatorSchneider, Petra
dc.creatorSollinger, M.
dc.creatorPrettl, W.
dc.creatorUstinov, V. M.
dc.creatorZhukov, A. E.
dc.creatorVorobjev, L. E.
dc.date2003-01-21
dc.date.accessioned2026-07-07T02:49:17Z
dc.date.available2026-07-07T02:49:17Z
dc.descriptionIt is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic and the circular photogalvanic effects. The monopolar spin orientation in n-type materials is shown to be possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.
dc.identifierhttps://arxiv.org/abs/cond-mat/0301393
dc.identifierhttp://arxiv.org/abs/cond-mat/0301393
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20736
dc.subjectCondensed Matter
dc.titleMonopolar Optical Orientation of Electronic Spins in Semiconductors
dc.typetext

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